LED显示屏
有源矩阵
基质(化学分析)
晶体管
像素
电子工程
计算机科学
二极管
工程类
半导体器件
显示设备
点阵
电气工程
集成电路
氧化物薄膜晶体管
系统集成
背景(考古学)
发光二极管
纳米技术
CMOS芯片
材料科学
作者
Yizhe Wang,Jiaxin Wu,Haifeng Wu,Xudong Yang,Xiaoqin Liao,Junjie Zhang,Ziyang Gan,Ziwei Li,Dong Li,Anlian Pan
标识
DOI:10.1002/admt.202500998
摘要
Abstract Micro‐LED displays have emerged as a promising technology for next‐generation high‐resolution, high‐brightness, and energy‐efficient display applications. The drive matrix plays a critical role in determining display performance, influencing pixel control, response speed, and integration feasibility. This review summarizes recent advances in drive matrix technologies, including polycrystalline silicon (poly‐Si), oxide semiconductors, GaN high‐electron‐mobility transistors (HEMTs), and silicon‐based complementary metal‐oxide‐semiconductor (CMOS), analyzing their advantages and limitations in Micro light‐emitting diode (Micro‐LED) integration. Furthermore, the potential of low‐dimensional semiconductor transistors is explored for future microdisplay applications, particularly in transparent displays and multifunctional integrated displays. By evaluating the progress and challenges of these driving technologies, this review provides insights into the development of high‐performance Micro‐LED display systems.
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