Optimizing Etch Processes for Enhanced Yield and Performance in SOT-MRAM Devices on 300 mm Wafers

To improve device performance and yield in magnetic tunnel junctions (MTJs) for spin-orbit-torque magnetic random access memory (SOT-MRAM), different ion beam etch (IBE) processes for MTJ device fabrication are developed and compared in detail. By introducing IBE in grazing incidence with silicon nitride (SiN) protection, footing reduction and metal redeposition removal can be achieved simultaneously, leading to more uniform device performance and high yield ($>99.9 \%$) on 300 mm wafer manufacturing platform. Integration of SOT-MTJs with the optimized IBE process provides a feasible way to streamline the mass production of SOT-MRAM.