材料科学
阴极发光
异质结
堆积
化学物理
紫外线
透射电子显微镜
光谱学
接口(物质)
分子物理学
结晶学
光电子学
纳米技术
发光
化学
物理
复合材料
有机化学
量子力学
毛细管数
毛细管作用
作者
Xiaomei Yan,Yixiao Jiang,Qianqian Jin,Tingting Yao,Tianlin Wang,Ang Tao,Chunyang Gao,Xiang Li,Chunlin Chen,Hengqiang Ye,Xiaoxia Ma
标识
DOI:10.1038/s41467-023-38548-9
摘要
Abstract Incoherent interfaces with large mismatches usually exhibit very weak interfacial interactions so that they rarely generate intriguing interfacial properties. Here we demonstrate unexpected strong interfacial interactions at the incoherent AlN/Al 2 O 3 (0001) interface with a large mismatch by combining transmission electron microscopy, first-principles calculations, and cathodoluminescence spectroscopy. It is revealed that strong interfacial interactions have significantly tailored the interfacial atomic structure and electronic properties. Misfit dislocation networks and stacking faults are formed at this interface, which is rarely observed at other incoherent interfaces. The band gap of the interface reduces significantly to ~ 3.9 eV due to the competition between the elongated Al-N and Al-O bonds across the interface. Thus this incoherent interface can generate a very strong interfacial ultraviolet light emission. Our findings suggest that incoherent interfaces can exhibit strong interfacial interactions and unique interfacial properties, thereby opening an avenue for the development of related heterojunction materials and devices.
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