The electron transfer mechanism between metal and silicon oxide composites for triboelectric nanogenerators

We present the first-principles calculation to research the electron transfer mechanism between metal and silicon oxide composites for triboelectric nanogenerators. Compared to SiX (X = Cu, Ag, Au and Pt) interface and SiOX interface models, OX interface models have a larger interface separation work and are more stable. OX interface models also have a more significant charge density difference since the O atoms at the interface can store electrons transferred from the metal layer to the SiO2 layer. When Pt atoms and O-terminated SiO2 contact, the formed OPt interface models have a higher magnitude of charge rearrangement. Our calculations also suggest that OPt interface models have a higher electrostatic potential offset, smaller virtual oxide thinning thickness and higher electron potential barrier height. Therefore, the OPt interface models have a longer service life and a stronger ability to store friction-captured electrons.