MOSFET
态密度
凝聚态物理
费米能级
兴奋剂
电容
霍尔效应
表面状态
半导体
材料科学
计算物理学
化学
电压
曲面(拓扑)
光电子学
物理
电子
电阻率和电导率
几何学
电极
量子力学
数学
物理化学
晶体管
标识
DOI:10.35848/1347-4065/abd369
摘要
Abstract A simple method to estimate the shallow interface trap density of states and the energy level of a MOSFET channel is proposed in this paper. This method estimates the trap density of states directly from the surface carrier density in the channel determined by Hall effect measurements, without any combination of the other multiple measurement methods. Fermi–Dirac statistics was applied to calculate the surface carrier density at a certain surface potential. Incomplete ionization of doped impurities in the equilibrium region was also considered for a wide bandgap semiconductor such as SiC. This method was demonstrated using n-channel 4H-SiC MOSFETs and was confirmed to be reasonable as the estimated trap density of states was equivalent to that obtained via a previous method combined with Hall effect and split capacitance–voltage measurements.
科研通智能强力驱动
Strongly Powered by AbleSci AI