Determination of band alignment at the CdTe/SnTe heterojunction interface for CdTe thin-film solar cells

The Ohmic back contact for CdTe is a key issue to realize high-efficiency CdTe thin film solar cells because of the high work function of CdTe. CdTe/SnTe heterojunctions (HJs) have been implemented to address this issue which shows promising potential, but the band alignment at the HJs is unknown. The valence band offsets in MBE-grown cadmium telluride (CdTe)/tin telluride (SnTe) (111) heterostructures were measured with X-ray photoelectron spectroscopy (XPS). The XPS results show that the heterostructure has an ideal type-I band structure for CdTe solar cells applications, with a valence band offset of − 1.33 ± 0.18 eV and a conduction band offset of 0.09 ± 0.18 eV , which expedites hole transport from the CdTe absorber to the hole electrode and improves the Ohmic contact for CdTe. Experimental determination of the band structure of CdTe/SnTe HJs can help improve the photovoltaic performance of CdTe thin film solar cells and facilitate the design and fabrication of CdTe/SnTe related devices. Furthermore, we inserted a SnTe back contact buffer layer into the CdTe thin film solar cells, and it was compared with the cell structure without the SnTe buffer layer. The feasibility of using SnTe as a solar cell back contact is confirmed.