The Valence Band Offset of an Al 0.17 Ga 0.83 N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy

The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13 ± 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ∼0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.