P‐34: Study on the Properties of Silicon‐Nitride Thin Films Deposited by PECVD

We have deposited silicon nitride (SiNx) film by plasma‐enhanced chemical vapor deposition at 230°C. The high‐quality SiNx with low hydrogen content, high compactness and low stress was achieved successfully by adjusting the pressure and silane‐ammonia gas flow ratio. The Refractive index, thickness and stress were tested by ellipsometer. The chemical bonding including Si‐N, Si‐H and N‐H in those films was analyzed by Fourier Transform Infrared Spectroscopy. The compactness was characterized by the etch rate of the film under plasma etching gas SF 6 and O 2 .