Effect of Rapid Thermal Annealing Ambient on Denuded Zone and Oxygen Precipitates in a 300mm Silicon Wafer

In a 300mm silicon wafer,a suitable denuded zone depth and a high oxygen precipitate density are necessary to get a high gettering efficiency and to improve the gate oxide integrity (GOI).In this work,Ar and an N2/NH3 mixture gas are applied as rapid thermal annealing (RTA) ambients.It is demonstrated that a high density of oxygen precipitate and a thin denuded zone are obtained in the N2/NH3 mixture ambient,while a low density of oxygen precipitate and a thick denuded zone are observed in the wafer annealed in the Ar ambient.The effect of the RTA ambient and annealing time on the denuded zone and oxygen precipitates is discussed.