Deep silicon plasma etching: selection of processes for different applications

Present paper overviews existent and newly developed DSE technologies offering optimal choice for specific demands. Under consideration there are four types of deep silicon etching processes: cyclic original Bosch process and modified one, continuous cryoetch process, cyclic STiGer process, and new Ox-Etch process. All processes designed with fluorine chemistry of SF₆ based plasma that provides fastest etch reaction with Silicon enhanced by ion bombardment from plasma. The differences are in approach used to suppress the isotropic etching of the structure sidewalls to achieve required anisotropy and of etch process.