激子
单层
极化(电化学)
兴奋剂
材料科学
激发
凝聚态物理
电子
光电子学
纳米技术
物理
化学
量子力学
物理化学
作者
Keisuke Shinokita,Xiaofan Wang,Yuhei Miyauchi,Kenji Watanabe,Takashi Taniguchi,Kazunari Matsuda
标识
DOI:10.1002/adfm.201900260
摘要
Abstract Enhancement and continuous control of the excitonic valley polarization in electrostatically doped monolayer WSe 2 are demonstrated. Under excitation with circularly polarized light, 20% valley polarization of excitons around the charge neutrality condition at 70 K is increased to 40% by modulating the electron/hole density up to 2 × 10 12 cm −2 . This increase originates from slow valley relaxation for neutral exciton between the K and − K valleys owing to screening of long‐range e – h exchange interactions by doped carriers. The gate‐dependences of the exciton valley polarization at various temperatures are reproduced by theoretical calculations, which holds potential for next‐generation valleytronic devices continuously controlled by an applied bias voltage.
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