电容器
材料科学
电介质
电容
分析化学(期刊)
电气工程
光电子学
化学
物理化学
有机化学
电压
工程类
电极
作者
Jae Jin Chung,Seon Joong Kim,Jae Won Shim
标识
DOI:10.1109/ted.2023.3287812
摘要
High capacitance and low leakage current of capacitors are crucial for scaling down dynamic random access memory (DRAM). In this study, high-work-function (WF) indium sesquioxide (In 2 O 3 ) and vanadium pentoxide (V 2 O 5 ) ultrathin films were inserted as interlayers to reduce the leakage current of capacitors by using a titanium dioxide (TiO 2 ) dielectric, which has a particularly high dielectric constant. This modification improved the morphology and increased the conduction-band offset. Consequently, the leakage current was reduced by more than 3500 times compared with that of the device without an interlayer. Furthermore, each interlayer functioned as a seed layer in the growth of TiO 2 and exhibited a change in the crystallinity of the anatase phase, which resulted in an increase of 12.5% in capacitance. These results revealed that the proposed method effectively reduced the leakage current and maintained capacitor capacitance, thereby addressing a critical problem of TiO 2 dielectrics.
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