锗
超导电性
材料科学
三元运算
硅化物
凝聚态物理
冶金
物理
计算机科学
硅
锗
程序设计语言
作者
Yusaku Shinoda,Yoshihiko Okamoto,Youichi Yamakawa,Hiroshi Takatsu,Hiroshi Kageyama,Daigorou Hirai,K. Takenaka
标识
DOI:10.7566/jpsj.93.023701
摘要
The electronic properties of ScPdGe and ScPdSi, crystallizing in the hexagonal ZrNiAl and orthorhombic TiNiSi structures, respectively, are investigated.ScPdGe and ScPdSi are found to show bulk superconductivity below 0.9 and 1.7 K, respectively, based on electrical resistivity and heat capacity data measured using synthesized polycrystalline samples.First-principles calculations indicate the presence of large contributions of Sc 3d and Pd 4d electrons at the Fermi energy in both materials.The electronic properties and electronic states of these materials are discussed in comparison with those of several superconductors containing scandium and a 4d transition metal element.
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