单层
二硫化钼
化学气相沉积
材料科学
拉曼光谱
拉伤
拉伸应变
基质(水族馆)
半导体
应变工程
极限抗拉强度
化学工程
钼
纳米技术
复合材料
光电子学
光学
冶金
硅
工程类
地质学
内科学
物理
医学
海洋学
作者
L. Seravalli,F. Esposito,Matteo Bosi,Lucrezia Aversa,Giovanna Trevisi,Roberto Verucchi,L. Lazzarini,Francesca Rossi,Filippo Fabbri
出处
期刊:Nanoscale
[Royal Society of Chemistry]
日期:2023-01-01
卷期号:15 (35): 14669-14678
被引量:23
摘要
/Si substrate by liquid precursor chemical vapor deposition, is mainly dependent on the size of the monolayer. In fact, we identify a critical size equal to 20 μm, from which the built-in strain increases drastically. The built-in strain is the maximum for a 60 μm sized monolayer, leading to 1.2% tensile strain with a partial release of strain close to the monolayer triangular vertexes due to the formation of nanocracks. These findings also imply that the standard method for evaluation of the number of layers based on the Raman mode separation can become unreliable for highly strained monolayers with a lateral size above 20 μm.
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