Formation of Self-Bonded SiC Layers by Means of Laser Radiation

The article investigates the possibility of obtaining products from self-bonded silicon carbide by laser irradiation in the absence of any additional impregnation with carbon-containing materials after siliconization. It is found that by controlling heating at each point of exposure, it is possible to consistently carry out all the necessary steps of the standard reaction sintering procedure in one cycle and change the traditional approach of forming similar products using high-temperature heating furnaces. The sintering quality is determined after etching of the unreacted silicon by several laboratory methods. The focus is on the study of bridges between the particles of the secondary SiC, both within the layers and at their boundaries, because they determine the strength characteristics of the created material and make it possible to connect the sintered areas with each other. After all the necessary sintering steps of single-layer samples, the authors was attempted layer-by-layer buildup and to simulate the welding of two presintered samples.