材料科学
镓
铟
原子层沉积
图层(电子)
锌
薄膜晶体管
光电子学
沉积(地质)
晶体管
薄膜
纳米技术
冶金
电气工程
电压
古生物学
工程类
生物
沉积物
作者
Sang‐Joon Park,Se-Ryong Park,Jong Mu Na,Woo-Seok Jeon,Youngjin Kang,Sukhun Ham,Yong‐Hoon Kim,Yung-Bin Chung,Tae‐Jun Ha
摘要
Charge transport properties of indium–gallium–zinc oxide thin-film transistors fabricated by atomic-layer deposition are investigated through comparative analyses based on steady-state DC and time-domain transient measurements.
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