Low-Temperature Sintering Technologies in Power Electronics: Materials, Process, and Advanced Packaging of SiC WBG Semiconductors

SiC power devices represent a breakthrough in wide bandgap semiconductor technology, offering superior performance through high current density, extreme temperature operation, and fast switching capabilities that enable transformative improvements in power electronics, yet their full potential is constrained by the limitations of traditional soldering techniques in meeting stringent high-temperature stability and thermal management requirements. This chapter comprehensively examines low-temperature sintering technology as a transformative solution for SiC interconnects, showcasing material innovations including advanced Ag sintering formulations with nano/micro hybrid particles achieving robust connections at unprecedented low temperatures through particle engineering breakthroughs, alongside pioneering Cu sintering methods utilizing formic acid reduction and nanoscale surface treatments to provide cost-effective alternatives with exceptional mechanical strength exceeding 130 MPa. The implementation of this technology offers significant advantages across advanced packaging architectures, including DTS, Cu Clip, and double-sided cooling systems, as well as emerging embedded configurations. These developments firmly establish low-temperature sintering as an essential enabling technology for next-generation power electronics packaging solutions.