Comparative Analysis of AlN/β-Ga2O3 and MgZnO/CdZnO Gate All Around Field Effect Transistors (GAA-FETs) for Analog/RF Applications

In this work, a 3-D model is presented for the comparative analysis of different Figures of merit (FOM) for MgZnO/CdZnO and AlN/Ga 2 O 3 Gate All Around Field Effect Transistor (GAA-FET). It is noticed within the analyzed device geometries that for different values of channel length (CL), temperature (T) and channel height (H); the peak magnitude of transconductance ([Formula: see text]) for ZnO-based GAA-FET is higher than Ga 2 O 3 -based GAA-FET relatively by 0.996 for CL = 20[Formula: see text]nm and [Formula: see text] = 1[Formula: see text]V. The peak magnitude of second and third-order voltage intercept points, i.e., VIP 2 , VIP 3 and third-order intercept input power (IIP 3 ) for ZnO-based GAA-FET is noticed to be higher than Ga 2 O 3 -based GAA-FET relatively by 0.89, 0.59 and 0.80, respectively, for CL of 30 nm at [Formula: see text] = 1[Formula: see text]V. On the contrary, the Ga 2 O 3 -based GAA-FET is analyzed to exhibit lower peak magnitude of first and second-order derivatives of [Formula: see text], i.e., [Formula: see text], [Formula: see text] and third-order intermodulation distortion (IMD 3 ) relatively by 0.94, 0.66 and 3.59[Formula: see text]dB, respectively, for CL = 20[Formula: see text]nm and [Formula: see text] = 1[Formula: see text]V as compared to Ga 2 O 3 based GAA-FET. It is noticed that the AlN/[Formula: see text]-Ga 2 O 3 GAA-FET provides a lower magnitude of output conductance than MgZnO/CdZnO GAA-FET, thus highlighting it as a potential contender for analog circuit applications.