材料科学
单层
欧姆接触
工作职能
电子迁移率
带隙
光电子学
砷化铟
石墨烯
铟
纳米技术
图层(电子)
砷化镓
作者
Wenjing Yu,Jingzhen Li,Yi Wu,Jing Lü,Yongzhe Zhang
摘要
In this work, we chose 2D monolayer InAs as a channel material and investigated the mechanical and electrical properties and the interfacial properties of high-mobility ML InAs in contact with common metals from first-principles calculations.
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