Low-Temperature Atmospheric-Pressure Plasma-Enhanced Chemical Deposition of Silicon Dioxide Films from Tetraethoxysilane

Thin films were prepared in the tetraethoxysilane–helium system on silicon plats in atmospheric-pressure dielectric barrier discharge at low temperatures in the interval 50–210°С. The coatings prepared under different conditions (temperature of the substrate, power absorbed in plasma) were characterized. An increase in the temperature of the substrate leads to an increase in the film deposition rate, to a decrease in the film porosity, to an increase in the density, and to a decrease in the content of CH bonds in CH2 and CH3 groups. An increase in the power absorbed in the plasma leads to the formation of films with low density and unsatisfactory dielectric properties.