量子点
量子产额
材料科学
石墨氮化碳
光致发光
剥脱关节
插层(化学)
Zeta电位
制作
光电子学
荧光
纳米技术
化学工程
石墨烯
纳米颗粒
化学
无机化学
光催化
光学
有机化学
物理
医学
替代医学
病理
工程类
催化作用
作者
Xingchen He,Yanliang Liu,Christopher J. Butch,Bo Ram Lee,Feng Guo,Jiangxiao Wu,Ziyang Wang,Qian Lu,Jung Hyun Jeong,Yiqing Wang,Sung Heum Park
出处
期刊:Small
[Wiley]
日期:2019-09-12
卷期号:15 (44)
被引量:27
标识
DOI:10.1002/smll.201902735
摘要
Abstract Here, a simplified synthesis of graphitic carbon nitride quantum dots (g‐C 3 N 4 ‐QDs) with improved solution and electroluminescent properties using a one‐pot methylamine intercalation–stripping method (OMIM) to hydrothermally exfoliate QDs from bulk graphitic carbon nitride (g‐C 3 N 4 ) is presented. The quantum dots synthesized by this method retain the blue photoluminescence with extremely high fluorescent quantum yield (47.0%). As compared to previously reported quantum dots, the g‐C 3 N 4 ‐QDs synthesized herein have lower polydispersity and improved solution stability due to high absolute zeta‐potential (−41.23 mV), which combine to create a much more tractable material for solution processed thin film fabrication. Spin coating of these QDs yields uniform films with full coverage and low surface roughness ideal for quantum dot light‐emitting diode (QLED) fabrication. When incorporated into a functional QLED with OMIM g‐C 3 N 4 ‐QDs as the emitting layer, the LED demonstrates ≈60× higher luminance (605 vs 11 Cd m −2 ) at lower operating voltage (9 vs 21 V), as compared to the previously reported first generation g‐C 3 N 4 QLEDs, though further work is needed to improve device stability.
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