Large-scalable graphene oxide films with resistive switching for non-volatile memory applications

Abstract In the present work, it is demonstrated for the first time that a simple, specially developed method for graphene oxide (GO) deposition on large areas opens the prospects of GO’s wide application in planar-group technologies for creating different electronic devices including memristor devices for neuromorphic computing systems in the field of large data and artificial intelligence. MOS structures based on synthesized large-area GO films were formed, and their switching characteristics were studied. Current-voltage measurements performed on the MOS capacitors demonstrated forming-less, device’s self-limited current behavior of GO bipolar resistive switching characteristics with the current density of up to 1 A/cm2. Multiple sharp transitions from the high resistance state to low resistance state in the pristine GO film under the DC voltage sweep may indicate formation of multiple conductive filaments that provide stable conductive paths between GO layers. It was found out that in our devices at least two resistive switching mechanisms may occur simultaneously, namely, filament formation and charge trapping/de-trapping, which is great advantages of GO over other materials. The observed effects are interpreted using a model explaining resistive switching in GO associated with the drift of functional groups and its impact on the resulting different sp3 and sp2 domains.