纳米片
神经形态工程学
材料科学
各向异性
晶体管
纳米技术
光电子学
神经科学
计算机科学
人工神经网络
电压
物理
人工智能
量子力学
生物
作者
Jing‐Kai Qin,Feichi Zhou,Jingli Wang,Jiewei Chen,Cong Wang,Xuyun Guo,Shouxin Zhao,Yi Pei,Liang Zhen,Peide D. Ye,Shu Ping Lau,Ye Zhu,Cheng‐Yan Xu,Yang Chai
出处
期刊:ACS Nano
[American Chemical Society]
日期:2020-08-04
卷期号:14 (8): 10018-10026
被引量:72
标识
DOI:10.1021/acsnano.0c03124
摘要
Hardware implementation of an artificial neural network requires neuromorphic devices to process information with low energy consumption and high heterogeneity. Here we demonstrate an electrolyte-gated synaptic transistor (EGT) based on a trigonal selenium (t-Se) nanosheet. Due to the intrinsic low conductivity of the Se channel, the t-Se synaptic transistor exhibits ultralow energy consumption, less than 0.1 pJ per spike. More importantly, the intrinsic low symmetry of t-Se offers a strong anisotropy along its c- and a-axis in electrical conductance with a ratio of up to 8.6. The multiterminal EGT device exhibits an anisotropic response of filtering behavior to the same external stimulus, which enables it to mimic the heterogeneous signal transmission process of the axon-multisynapse biostructure in the human brain. The proof-of-concept device in this work represents an important step to develop neuromorphic electronics for processing complex signals.
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