材料科学
表征(材料科学)
钴
硫化物
硫化钴
化学工程
纳米技术
冶金
物理化学
电化学
电极
工程类
化学
作者
Tizazu Abza,Dereje Gelanu Dadi,Fekadu Gashaw Hone,Tesfaye Chebelew Meharu,Gebremeskel Tekle,Eyob Belew Abebe,Kalid Ahmed
摘要
Cobalt sulfide thin films were synthesized from acidic chemical baths by varying the deposition time. The powder X‐ray diffraction studies indicated that there are hexagonal CoS, face‐centered cubic Co 3 S 4 , and cubic Co 9 S 8 phases of cobalt sulfide. The crystallite size of the hexagonal CoS phase decreased from 52.8 nm to 22.5 nm and that of the cubic Co 9 S 8 phase increased from 11 nm to 60 nm as the deposition time increased from 2 hrs to 3.5 hrs. The scanning electron microscopic images revealed crack and pinhole free thin films with uniform and smooth background and few large polygonal grains on the surface. The band gap of the cobalt sulfide thin films decreased from 1.75 eV to 1.3 eV as the deposition time increased from 2 hrs to 3.5 hrs. The photoluminescence (PL) spectra of the films confirmed the emission of ultraviolet, violet, and blue lights. The intense PL emission of violet light at 384 nm had red shifted with increasing deposition time that could be resulted from the increase in the average crystallite size. The FTIR spectra of the films indicated the presence of OH, C‐O‐H, C‐O, double sulfide, and Co‐S groups. As the deposition time increased, the electrical resistivity of the cobalt sulfide thin films decreased due to the increase in both the crystallite size and the films’ thickness.
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