Hf-based high-k gate dielectrics - Scalability for hp45 node and beyond -

This proceeding we will discuss the scalability of Hf-based high-k gate dielectrics for hp45 node and beyond both with high-temperature gate-first integration and low-temperature gate-last integration. It describes the process optimization and metal gate MOSFET characteristics using gate-first integration with HfSiON and gate-last integration with HfO2.