材料科学
紫外线
兴奋剂
纳米结构
光电子学
热的
热处理
纳米技术
热发射
物理
复合材料
气象学
标识
DOI:10.12693/aphyspola.127.910
摘要
ZnO nanostructures doped with a high concentration of Gallium (Ga) were synthesized on a Si substrate by thermal evaporation.Subsequent heat treatments of selected nanostructures was done at 600 • C, 700 • C, 800 • C and 900 • C. Scanning electron microscope (SEM), X-Ray diraction (XRD) and photoluminance (PL) studies was performed after every heat treatment.Systematic scanning electron microscope (SEM) studies suggest signicant sublimation at 800 • C. XRD results show that crystal quality was improved by annealing and phase separation may occur after high temperatures annealing.Ultraviolet (UV) and visible emission depends strongly on the annealing temperatures and luminescent eciency of UV emission is enhanced signicantly with heat treatment.
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