Growth and Characterization of LED Structures Grown by MOCVD on HVPE‐Grown GaN Templates

Optical and structural properties of light emitting diode (LED) structures grown by MOCVD on both GaN/sapphire templates and sapphire substrates are presented. The GaN/sapphire 3–5 μm thick templates were grown by HVPE on c-plane sapphire. Si-doping can alter defect formation in the templates. Depending on the LED structure design and growth conditions, the EL peak position varied in the range of 380 to 430 nm. MOCVD deposition improved the morphology of the HVPE-grown surface. The LED structures grown on GaN/sapphire templates had similar or superior EL intensity compared to samples grown on sapphire substrates.