Morphology and Amine Accessibility of (3‐Aminopropyl) Triethoxysilane Films on Glass Surfaces

三乙氧基硅烷 硅烷 沉积(地质) 胺气处理 材料科学 相(物质) 化学工程 罗丹明 水溶液 薄膜 化学气相沉积 苦味酸 化学 有机化学 荧光 纳米技术 光学 工程类 物理 古生物学 生物 沉积物
作者
Wei Wang,Mark W. Vaughn
出处
期刊:Scanning [Wiley]
卷期号:30 (2): 65-77 被引量:86
标识
DOI:10.1002/sca.20097
摘要

3-Aminopropyl) triethoxysilane (APTES) is commonly used to functionalize glass substrates because it can form an amine-reactive film that is tightly attached to the surface. In this study, we investigated the morphology and chemical reactivity of APTES films prepared on glass substrates using common deposition techniques. Films were prepared using concentrated vapor-phase deposition, dilute vapor-phase deposition, anhydrous organic-phase deposition and aqueous-phase deposition. All films were annealed, or cured, at 150 degrees C. The morphology of the films was quantified by fluorescence and by atomic force microscopy (AFM). The optical equivalent of the AFM images was computed and then used to directly compare optical and AFM images. Reactive amine density was determined by a picric acid assay and by a method that employed N-succinimidyl 3-[2-pyridyldithio]-propionamido (SPDP) cross-linked rhodamine. Fluorescence and AFM images showed that silane films prepared from dilute vapor-phase and aqueous-phase deposition were more uniform and had fewer domains than those deposited by the other methods. The ratio of picric acid-accessible amino groups to SPDP cross-linked rhodamine-accessible groups varied with the preparation method, suggesting reactant size-dependent difference in amine accessibility. We found a larger number of accessible amino groups on films prepared by vapor-phase deposition than on those prepared from solution deposition. The dilute vapor-phase deposition technique produced relatively few domains, and it should be a good choice for bioconjugation applications. There were appreciable differences in the films produced by each method. We suggest that these differences originate from differences in film rearrangement during annealing.
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