宏
磁阻随机存取存储器
香料
计算机科学
CMOS芯片
晶体管
泄漏(经济)
炸薯条
计算机硬件
嵌入式系统
计算机体系结构
电子工程
随机存取存储器
电气工程
工程类
电压
电信
经济
宏观经济学
程序设计语言
作者
Ryusuke Nebashi,Noboru Sakimura,Tadahiko Sugibayashi,N. Kasai
标识
DOI:10.1587/transele.e92.c.417
摘要
We propose an MRAM macro architecture for SoCs to reduce their area size. The shared write-selection transistor (SWST) architecture is based on 2T1MTJ MRAM cell technology, which enables the same fast access time with a smaller cell area than that of 6T SRAMs. We designed a 4-Mb macro using the SWST architecture with a 0.15-µm CMOS process and a 0.24-µm MRAM process. The macro cell array consists of 81T64MTJ cell array elements, each storing 64bits of data. The area size is reduced by more than 30%. By introducing a leakage-replication (LR) read scheme, a wide read margin on a test chip is accomplished and 50-ns access time is achieved with SPICE simulation. The 2T1MTJ macro and 81T64MTJ macro can be integrated into a single SoC.
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