欧姆接触
热离子发射
外延
材料科学
兴奋剂
光电子学
凝聚态物理
工作职能
带隙
掺杂剂
费米能级
场电子发射
图层(电子)
半导体
电子
纳米技术
物理
量子力学
作者
T.-J. Kim,Paul H. Holloway
标识
DOI:10.1080/10408439708241262
摘要
Abstract Formation of ohmic contacts onto GaAs epitaxial layers was reviewed. Because the Fermi energy of GaAs is pinned at the surface near the middle of the bandgap, it is impossible to choose a metal with the proper work function to make an ohmic contact. Instead, it is necessary to create a heavily doped surface layer and using field emission or thermionic field emission to achieve an ohmic contact. The oldest known contact metallization for GaAs is sequentially deposited thin films of Au, Ge, and Ni. It was shown that the ‘dopant diffusion model’, widely accepted to date to explain the formation of an n+ layer on GaAs to form the ohmic contact, is incorrect. Instead, the “solid phase regrowth model” was discussed in detail and shown to describe formation of ohmic contacts in this system. Based on this result, general rules for forming ohmic contacts to compound semiconductors with pinned Fermi levels or large values of electron affinities plus bandgap were expressed.
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