等离子体增强化学气相沉积
氮化硅
X射线光电子能谱
材料科学
无定形固体
二氧化硅
化学气相沉积
薄膜
晶体硅
硅
化学键
傅里叶变换红外光谱
红外光谱学
化学计量学
化学工程
分析化学(期刊)
化学
结晶学
纳米技术
复合材料
光电子学
物理化学
有机化学
工程类
作者
Neerushana Jehanathan,Yinong Liu,B.A. Walmsley,John Dell,Martin Saunders
摘要
This study investigated the effect of oxidation on the chemical bonding structures of silicon nitride thin films synthesized by a low-temperature plasma-enhanced chemical vapor deposition (PECVD) method. These films were heat treated to different temperatures up to 1373 K. The bonding structures were studied by means of x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. It was found that the amorphous PECVD SiNx films were subjected to oxidation in air at elevated temperatures. The oxidation caused the formation of crystalline silicon dioxide within the matrix of amorphous silicon nitride, conforming to the “random mixing” model. The crystalline silicon dioxide formed is believed to be stoichiometric SiO2, whereas the remaining matrix is believed to be a nonstoichiometric silicon oxynitride with a structure conforming to the “random bonding” model.
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