激光器
光电子学
材料科学
二极管
砷化镓
半导体激光器理论
量子阱
光学
物理
作者
K. Wakita,Yuichi Kawamura,H. Asahi
出处
期刊:Electronics Letters
[Institution of Engineering and Technology]
日期:1985-02-28
卷期号:21 (5): 193-194
被引量:2
摘要
The polarisation-dependent gain spectra were measured at −190 C for InGaAs InGaAlAs InAlAs SCH-MQW laser diodes. The peak gain for TE polarisation was much larger (>750 cm−1) than that for TM polarisation, while the peak gain difference for InGaAs InAlAs DH lasers was as small as 15 cm−1. This peak gain difference for SCH-MQW lasers is surprisingly larger than that for GaAs GaAlAs MQW lasers. This difference was explained by the polarisation-related selection rules for optical transition.
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