Quantum Efficiency Optimization of Wavelength Extended InGaAs Photodetectors

A modified physical model for researching the optical response of double heterojunction InGaAs photodetectors was established.The influence of device parameters on quantum efficiency of typical InP-based wavelength extended In0.8Ga0.2As/In0.79Al0.21As PIN photodiodes under both front and backside illuminated conditions were investigated.Simulation results agree well with the measured data of the wavelength extended InGaAs photodiodes grown by GSMBE.Furthermore,two modified wavelength extended InGaAs diode structures for back-illumination are proposed,and the optimal structural parameters are discussed.