响应度
光电探测器
材料科学
光电子学
p-n结
光学
半导体
物理
作者
Peigang Li,Haoze Shi,Kai Chen,Daoyou Guo,Wei Cui,Yusong Zhi,Shunli Wang,Zhenping Wu,Zhengwei Chen,Weihua Tang
摘要
A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W−1) was fabricated by constructing p–n junction of GaN/Ga2O3 films.
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