Thin wafer handling (or temporary bonding/de-bonding) and permanent wafer bonding are two of the key enabling technologies for 3D-IC integration process. Temporary bonding adhesive in conjunction with de-bonding method has to be carefully selected to obtain damage-free thinned processed wafers. Room temperature mechanical lift-off de-bonding method with proper de-bond wave front control is considered to be promising. Metal-adhesive or metal-oxide hybrid bonding can create a final stacked 3D-IC structure with superior mechanical strength, electrical performance and excellent post-bond alignment.