材料科学
三氧化钼
钝化
有机太阳能电池
光伏
降级(电信)
光伏系统
纳米技术
析氧
化学工程
热稳定性
氧化还原
异质结
钼
光电子学
能量转换效率
热的
氧化锡
氧气
工作(物理)
聚合物太阳能电池
有机半导体
表面改性
作者
Qianqian Qi,Jiaming Huang,Cenqi Yan,Jiayu Wang,Jiehao Fu,Ke Jing,Guang Yang,Yakun He,Yufei Gong,Jie Lv,Xiaokang Sun,Xian He,Qiang Yang,Xiancheng Ren,Ke Zeng,Hanlin Hu,Hua Tang,Frédéric Laquai,Lei Meng,Yanfang Li
标识
DOI:10.1002/adma.202522299
摘要
ABSTRACT While organic photovoltaics (OPVs) have achieved remarkable efficiencies, their practical deployment remains hindered by insufficient stability. Herein, we find that degradation is strongly associated with diffusion‐driven intermixing and redox chemistry at the buried molybdenum trioxide (MoO 3 )/photoactive materials contact region. To address this issue, we incorporate 1H‐isoindole‐1,3(2H)‐dione, 2,2’‐(oxydi‐4,1‐phenylene) bis[3a,4,7,7a‐tetrahydro‐(9CI)] (IPE) into the bulk heterojunction as a bulk passivator that interacts with diffusing MoO 3 species by passivating oxygen vacancies in MoO 3 , thereby suppressing redox reactions between MoO 3 and photoactive materials. The IPE‐containing devices achieve a champion efficiency of 19.06% alongside exceptional thermal robustness, retaining 87.5% of their initial efficiency after thermal aging at 170°C for 5 h (vs. 48.8% for control devices). Critically, under harsh environmental stressors, these devices maintain >80% of their initial efficiency after 500 thermal cycles (−40°C to 85°C, ∼60% relative humidity, ISOS‐T‐3) and over 1150‐h continuous maximum power point tracking under 1 Sun illumination (65°C, ∼50% relative humidity, ISOS‐L‐3). This represents one of the highest stability levels reported for OPVs under the stringent ISOS‐T‐3 and ISOS‐L‐3 protocols. This work provides a generalizable bulk modification strategy to mitigate diffusion‐ and redox‐driven degradation at buried contacts, paving the way for the practical deployment of stable, high‐efficiency OPVs.
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