材料科学
扩散
多物理
能量转换效率
石墨
双层
光致发光
宽禁带半导体
动力学
光电子学
化学工程
空隙(复合材料)
纳米技术
载流子寿命
二极管
太阳能电池
化学物理
原子扩散
作者
Yuan Li,Tan Guo,Letu Siqin,Xiao Xu,Jinlin Wang,Shuyu Li,Yaqing Cui,Menghan Jiao,Bowen Zhang,Shudan Chen,Jingchen Wang,Ruijian Liu,Jiangjian Shi,Chengjun Zhu,Qingbo Meng
摘要
The early-stage uniformity and stability of selenium (Se) vapor during selenization critically determine the power conversion efficiency (PCE) of Cu2ZnSn(S,Se)4 (CZTSSe) devices. However, traditional large-volume graphite chambers (Ctrl) provide an overly spacious diffusion environment, leading to delayed Se supply and concentration fluctuations that promote void defects and Cu–Zn disorder. To address this, we propose a small-sized graphite box (S-box) that stabilizes Se delivery at the source by confining the diffusion volume, shortening the mass-transport path, and accelerating concentration equilibration. COMSOL Multiphysics simulations verify that this design markedly improves diffusion efficiency and rapidly establishes a stable concentration field; correspondingly, experiments show that S-box films exhibit higher crystallinity, reduced Sn2+ content, a denser bilayer structure with fewer voids, and a significantly lower overall defect density. Low-temperature photoluminescence further indicates that non-radiative recombination associated with VCu and band tail states is effectively suppressed. Accordingly, devices fabricated with the S-box achieve a champion efficiency of 14.33% (certified at 14.07%), establishing “restricting the Se vapor diffusion space” as the key point of selenization optimization.
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