钙钛矿(结构)
记忆电阻器
材料科学
兴奋性突触后电位
仿真
神经形态工程学
光电子学
纳米技术
导电体
抑制性突触后电位
图层(电子)
突触后电位
电子工程
薄膜
电极
内容寻址存储器
电阻式触摸屏
长时程增强
突触后电流
计算机科学
神经科学
钥匙(锁)
数码产品
作者
H. Li,Lingyu Meng,Jiayi Sun,X. G. Zhang
标识
DOI:10.1021/acs.jpclett.5c03606
摘要
Lead-free perovskite memristors have garnered significant attention owing to their facile fabrication, exceptional memristive properties, solution processability, and environmental benignity. In this study, Cu3Sb2I9 perovskite thin films were synthesized via a one-step spin-coating method and integrated as the functional layer in a vertically structured Ag/PMMA/Cu3Sb2I9/FTO device. The device exhibits reproducible bipolar, nonvolatile resistive switching with high endurance (>3000 cycles) and stable retention characteristics. In addition, it emulates key biological synaptic functions, including excitatory and inhibitory postsynaptic currents (EPSC/IPSC) and paired-pulse facilitation/depression (PPF/PPD). Furthermore, cognitive processes such as learning, forgetting, and relearning can be mimicked by applying programmed voltage-pulse sequences. Notably, associative learning behavior was experimentally reconstructed through electronic emulation of Pavlovian conditioning paradigms, demonstrating the capability of the device to establish and extinguish conditioned responses. This work provides a strategy for constructing all-inorganic and lead-free perovskite materials for biomimetic synaptic devices.
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