神经形态工程学
记忆电阻器
可塑性
计算机科学
材料科学
人工神经网络
神经科学
同突触可塑性
神经可塑性
适应性
峰值时间相关塑性
油藏计算
突触可塑性
人工智能
变质塑性
电子工程
生物
工程类
循环神经网络
复合材料
受体
生物化学
生态学
作者
Woojoon Park,Hanchan Song,E. Kim,Moon Gu Choi,Min Gu Lee,Hakseung Rhee,Gwangmin Kim,Taewook Go,Alba Martinez,Daehee Kim,Junmo Kang,Jae Hyun In,Kyung Min Kim
标识
DOI:10.1002/adma.202502255
摘要
The human brain's efficiency and adaptability in processing information is largely attributed to spatiotemporal spiking activities and intrinsic plasticity-the ability of neurons to autonomously modulate their excitability. Mott memristors, with their threshold switching characteristics, have been effectively utilized as artificial neurons, or neuristors, to generate spiking activities. However, the implementation of intrinsic plasticity and its significance in neuromorphic computing has yet to be systematically explored. Here, a frequency switching (FS) neuristor is presented that emulates neuron's intrinsic plasticity characteristics. By combining a volatile Mott memristor with a non-volatile valence change memory (VCM) memristor, the FS neuristor achieves programmable multi-level frequency-voltage (f-V) characteristics analogous to the transfer functions of neuronal intrinsic plasticity. Through device-based simulations of sparse neural networks, it is proposed that this intrinsic plasticity acts as memory and processor itself, enhancing network performance and reducing energy consumption. Additionally, intrinsic plasticity endows the network with structural plasticity, enabling full recovery of the network's performance after random neuron damage, suggesting a pathway toward more adaptive and resilient neuromorphic computing systems.
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