High-Frequency Modeling of Power Stage and Auxiliary Power System of 10 kV SiC MOSFET-Based Power Converters

In this paper, the high-frequency model of PEBB 6000, a 6 kV, 1 MW full-bridge power electronics building block (PEBB) incorporating 10 kV SiC MOSFET-based power modules is developed as a perfect representative of medium-voltage, high-power converters. The developed model primarily relies on measurement but also utilizes finite element analysis (FEA) and simulation tools when a measurement is not applicable. The power stage is partly modeled in the authors' previous work, focusing on switching transient. In this paper, the noise propagation path modeling are the focus, where 10 kV power modules are characterized and nonlinearly modeled; module-to-heatsink parasitic capacitance, DC busbar, capacitor daughtercards, heatsink-to-fan array parasitic capacitance, gate drivers, and isolated auxiliary power system (APS) power supplies complete circuit models along with their parasitic capacitances are measured and added to the model, focusing on the wireless power transfer (WPT) and current-transformer based gate-driver power supply (GDPS), as discussed throughout the digest. The study focuses on the impact of these components on the noise propagation paths and how they are impacted from the noise in one unit and neighboring units in a modular multi-level converter (MMC). The developed high-frequency model facilitates the examination of noise propagation paths under load conditions and the crosstalk between PEBB units in MMCs, enabling the assessment of the influence of neighboring units on others.