材料科学
热电效应
体积模量
卤化物
剪切模量
钙钛矿(结构)
功勋
塞贝克系数
凝聚态物理
带隙
热导率
直接和间接带隙
弹性模量
热力学
复合材料
结晶学
物理
无机化学
化学
光电子学
作者
Y. Dhakshayani,G. Kalpana
出处
期刊:Physica Scripta
[IOP Publishing]
日期:2023-10-02
卷期号:98 (11): 115527-115527
被引量:4
标识
DOI:10.1088/1402-4896/acff4c
摘要
Abstract First principles calculations are carried out to explore structural, elastic, electronic, charge density and thermoelectric properties of TlZnX 3 (X = F, Cl, Br and I) 3D halide cubic perovskites within the Generalized Gradient Approximation (GGA) through Quantum Espresso code. The elastic coefficients (C 11 , C 12 and C 44 ) and elastic modulii such as Young’s modulus, bulk modulus, shear modulus reveals that stiffness is higher in TlZnF 3 . Additionally using Pugh’s ratio and Cauchy’s pressure TlZnF 3 is classified as ductile whereas TlZnX 3 (X = Cl, Br and I) are classified as brittle materials. Phonon dispersion curve proves the dynamic stability of TlZnF3. The band structures of TlZnX 3 (X = F, Cl and Br) and TlZnI 3 shows semiconducting and metallic nature respectively. Due to replacement of halide ion the indirect band gap of TlZnX 3 (X = F, Cl and Br) decreases from 3.82 eV, 1.39 eV and 0.37 eV as the size of the anion increases. Using the Boltztrap code, thermoelectric parameters are analysed at temperatures of 400 K, 600 K and 800 K and chemical potential provides insight about optimal dopant. Large Seebeck Coefficient combined with ultra low thermal conductivity results in a high figure of merit for TlZnF 3 that satisfies industry standards (ZT ≈ 1). Together, these outcomes highlights that these Thallium based halide perovskite are reliable materials for high temperature thermoelectric devices.
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