光电探测器
响应度
光电子学
材料科学
制作
红外线的
暗电流
光电二极管
探测器
退火(玻璃)
半导体
光学
物理
复合材料
医学
替代医学
病理
作者
Shuyu Wen,Mohd Saif Shaikh,Oliver Steuer,Sławomir Prucnal,J. Grenzer,René Hübner,M. Turek,K. Pyszniak,Sebastian Reiter,Inga A. Fischer,Yordan M. Georgiev,M. Helm,Shaoteng Wu,Jun‐Wei Luo,Shengqiang Zhou,Yonder Berencén
摘要
GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology.
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