材料科学
异质结
兴奋剂
屏蔽效应
电磁屏蔽
电场
调制(音乐)
电荷(物理)
费米能级
凝聚态物理
光电子学
电子
复合材料
物理
声学
量子力学
作者
Yu Zhang,Zening Li,P. Tong,Lukai Zhang,Ye Wang,Xiuling Liu
摘要
The Al 2 O 3 films conduct n-type doping for 2D-MoS 2 by the electrostatic fielding effect. The underlying mechanism lies on the charge transfer process forced by Al 2 O 3 /MoS 2 interfacial electric field and thus Fermi level upshifting on the MoS 2 surface.
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