The Passively Synchronized Dual-Wavelength Q-Switched Tm: GdScO₃ Laser Based on SiTe₂

A novel two-dimension (2D) IV–VI2 materials, silicon telluride (SiTe2), has been fabricated as a saturable absorber (SA) using the liquid-phase exfoliation method, and it has been successfully employed as a laser modulator for the first time. Utilizing the SiTe2 SA, we have demonstrated a passively Q-switched (PQS) dual-wavelength Tm:GdScO3 laser, operating concurrently at 1982.3 nm and 1995.4 nm. Correspondingly, the PQS dual-wavelength Tm:GdScO3 laser achieves a shortest pulse width of 317 ns with an average output power of 622 mW and a repetition rate of 49.73 kHz.