Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model

A practical parameter extraction method for physics-based lumped-charge silicon carbide (SiC) merged PiN Schottky (MPS) diode model is presented. The physical parameters of a device model are necessary for accurate simulation but are usually not provided as these parameters are the core business profits of the manufacturers. The values of SiC MPS diode parameters are often based on assumptions or given in a wide range, thus the accuracy of the model simulation is compromised and the application of the model is also limited. The proposed method includes semiconductor physical and structural parameters and only some basic experiments are needed, such as reverse recovery and static characteristic experiments. Based on the lumped-charge SiC MPS diode model, reasonable assumptions are used and simple mathematical formulas are derived for the extraction of the parameters. Finally, the method is validated by two different SiC MPS diodes from CREE and CETC having the ratings of 1200 V/300 A and 3300 V/60 A.