Solar-blind photodetectors based on MXenes– β -Ga 2 O 3 Schottky junctions

Abstract In this work, high-performance solar-blind photodetectors based on MXenes– β -Ga 2 O 3 Schottky junctions have been developed by utilizing transparent conductive MXenes as the Schottky electrode of β -Ga 2 O 3 . Due to the high MXenes– β -Ga 2 O 3 Schottky barrier, the photodetectors exhibit a rectification ratio as high as over 10 3 at ±2 V. At zero bias, the photodiodes show a responsivity of 12.2 mA W −1 at 248 nm and a detectivity of 6.1 × 10 12 Jones, which are among the best values for β -Ga 2 O 3 -based solar-blind photodetectors working at zero bias. In addition, the Schottky photodiodes show a fast response speed with a rise time of 8 μ s and decay time of 131 μ s. Our results indicate that MXenes may be promising candidate for use as transparent conductive electrodes for UV optoelectronics.