Experimental and Theoretical Studies on the Reaction of H2 with NiO: Role of O Vacancies and Mechanism for Oxide Reduction

非阻塞I/O 化学 扩展X射线吸收精细结构 氧化物 氧烷 氧化镍 催化作用 无机化学 吸附 离解(化学) 活化能 分析化学(期刊) 结晶学 物理化学 吸收光谱法 光谱学 有机化学 物理 量子力学 生物化学 色谱法
作者
José A. Rodríguez,Jonathan C. Hanson,Anatoly I. Frenkel,Jae Y. Kim,Manuel Pérez
出处
期刊:Journal of the American Chemical Society [American Chemical Society]
卷期号:124 (2): 346-354 被引量:360
标识
DOI:10.1021/ja0121080
摘要

Reduction of an oxide in hydrogen is a method frequently employed in the preparation of active catalysts and electronic devices. Synchrotron-based time-resolved X-ray diffraction (XRD), X-ray absorption fine structure (NEXAFS/EXAFS), photoemission, and first-principles density-functional (DF) slab calculations were used to study the reaction of H(2) with nickel oxide. In experiments with a NiO(100) crystal and NiO powders, oxide reduction is observed at atmospheric pressures and elevated temperatures (250-350 degrees C), but only after an induction period. The results of in situ time-resolved XRD and NEXAFS/EXAFS show a direct NiO-->Ni transformation without accumulation of any intermediate phase. During the induction period, surface defect sites are created that provide a high efficiency for the dissociation of H(2). A perfect NiO(100) surface, the most common face of nickel oxide, exhibits a negligible reactivity toward H(2). The presence of O vacancies leads to an increase in the adsorption energy of H(2) and substantially lowers the energy barrier associated with the cleavage of the H-H bond. At the same time, adsorbed hydrogen can induce the migration of O vacancies from the bulk to the surface of the oxide. A correlation is observed between the concentration of vacancies in the NiO lattice and the rate of oxide reduction. These results illustrate the complex role played by O vacancies in the mechanism for reduction of an oxide. The kinetic models frequently used to explain the existence of an induction time during the reduction process can be important, but a more relevant aspect is the initial production of active sites for the rapid dissociation of H(2).
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