电子设备和系统的热管理
材料科学
消散
光电子学
热的
光圈(计算机存储器)
光学
氧化物
物理
热力学
机械工程
声学
冶金
工程类
作者
H.K. Lee,Young Min Song,Y.T. Lee,Jae Su Yu
标识
DOI:10.1016/j.sse.2009.06.005
摘要
The asymmetric intracavity-contacted oxide-aperture vertical-cavity surface-emitting lasers (VCSELs), operating at k � 980 nm, with different oxide aperture diameters were fabricated and their thermal analysis was theoretically performed using a three-dimensional cylindrical heat dissipation model. The heat flux, temperature profile, and thermal resistance (Rth) of the devices were investigated by incorporating heat source values, obtained from experimentally measured results, into the thermal simulation. For the fabricated VCSELs with benzocyclobutene passivation layer, the Rth decreased from 4612 K/W to 1130 K/ W as the oxide aperture diameter (Da) increased from 8 l mt o 16lm and it increased significantly below 8 lm. The use of the thin substrate and the passivation layer with a high conductivity enhances the heat dissipation, allowing for a low Rth. Furthermore, thick Au layers on contact pads and top DBR in intracavity-contacted VCSEL structures help increase heat removal from the active region. For Da =8 lm and 16 lm, the VCSELs with SiNx passivation layer, 5 lm thick extra Au layer, and 100 lm thick substrate indicate Rth = 3050 K/W and 778 K/W, respectively, leading to an improvement by >30% compared to the fabricated devices.
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