New Fabrication Process for Small Junctions Using a Selective Etch-Back Technique

A new process for fabricating small junctions from a full-wafer junction sandwich has been developed, in which a dry-etching technique is used for selectively etching an SiO2 insulating layer deposited on a junction. Using this new process and a deep-uv photolithography technology, we fabricated NbC x N1- x /MgO/NbC x N1- x junctions with dimensions of 0.8×1.1 µ m2.