Polarity Control in WSe<inf>2</inf> Field-Effect Transistors using Dual Gate Architecture

This study reports the polarity control in WSe ₂ FET using global p ⁺ -type Si back gate architecture in conjunction with Al gate. By using WSe ₂ as channel material and Au as source and drain contact metal, both hole and electron can be injected into the channel layer. As a result, p-type and n-type operation was experimentally demonstrated by applying appropriate back bias condition.